STZT2222 STZT2222a medium power npn transistors preliminary data n silicon epitaxial planar npn transistors n miniature plastic package for application in surface mounting circuits n general purpose mainly intended for use in medium power industrial application and for audio amplifier output stage n the complementary pnp types are stzt2907 and stzt2907a respectively ? internal schematic diagram june 2001 absolute maximum ratings symbol parameter value unit STZT2222 STZT2222a v cbo collector-base voltage (i e = 0) 60 75 v v ceo collector-emitter voltage (i b = 0) 30 40 v v ebo emitter-base voltage (i c = 0) 5 6 v i c collector current 0.8 a p tot total dissipation at t c = 25 o c 1.5 w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 2 3 sot-223 1/5
thermal data r thj-amb r thj-tab thermal resistance junction-ambient max thermal resistance junction-collecor tab max 83.3 10 o c/w o c/w mounted on a ceramic substrate area = 30 x 35 x 0.7 mm electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cbo collector cut-off current (i e = 0) v cb = 50 v v cb = 50 v t amb = 125 o c 10 10 na m a i cex collector cut-off current (v be = -3v) v ce = 60 v for STZT2222a 10 na i bex base cut-off current (v be = -3v) v ce = 60 v for STZT2222a 20 na i ebo emitter cut-off current (i e = 0) v eb = 3 v 10 na v (br)cbo collector-base breakdown voltage (ie = 0) i c = 10 m a for STZT2222 for STZT2222a 60 75 v v v (br)ceo * collector-emitter breakdown voltage (i b = 0) i c = 10 ma for STZT2222 for STZT2222a 30 40 v v v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 10 m a for STZT2222 for STZT2222 5 6 v v v ce(sat) * collector-emitter saturation voltage i c = 150 ma i b = 15 ma for STZT2222 for STZT2222a i c = 500 ma i b = 50 ma for STZT2222 for STZT2222a 0.4 0.3 1.6 1 v v v v v be(sat) * base-emitter saturation voltage i c = 150 ma i b = 15 ma for STZT2222 for STZT2222a i c = 500 ma i b = 50 ma for STZT2222 for STZT2222a 0.6 1.3 1.2 2.6 2 v v v v h fe * dc current gain i c = 0.1 ma v ce = 10 v i c = 1 ma v ce = 10 v i c = 10 ma v ce = 10 v i c = 150 ma v ce = 10 v i c = 150 ma v ce = 1 v i c = 500 ma v ce = 10 v for STZT2222 for STZT2222a i c = 10 ma v ce = 10 v t c = -55 o c for STZT2222a 35 50 75 100 50 30 40 35 300 STZT2222 / STZT2222a 2/5
electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit h fe ** small signal current gain i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 50 75 300 375 h ie ** input impedance i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 2 0.25 1.25 w w h re ** reverse voltage ratio i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 8x10 -4 4x10 -4 h oe ** output impedance i c = 1 ma v ce = 10 v f = 1 khz i c = 10 ma v ce = 10 v f = 1 khz 5 25 35 200 m s m s f t transition frequency i c = 20 ma v ce = 20 v f = 100 mhz for STZT2222 for STZT2222a 250 300 mhz mhz c cbo ** collector-base capacitance i e = 0 v cb = 10 v f = 100 khz 8 pf c ebo ** emitter-base capacitance i c = 0 v eb = 0.5 v f = 100 khz 25 pf nf** noise figure f = 1 khz d f = 200 hz r g = 1k w i c = 0.1 ma v ce = 10 v 4db t d ** delay time i c = 150 ma i b1 = 15 ma v bb = -0.5 v v cc = 30 v 10 ns t r ** rise time 25 ns t s ** storage time i c = 150 ma v cc = 30 v i b1 = -i b2 = 15 ma 225 ns t f ** fall time 60 ns * pulsed: pulse duration = 300 m s, duty cycle 1.5 % ** only for STZT2222a STZT2222 / STZT2222a 3/5
dim. mm inch min. typ. max. min. typ. max. a 1.80 0.071 b 0.60 0.70 0.80 0.024 0.027 0.031 b1 2.90 3.00 3.10 0.114 0.118 0.122 c 0.24 0.26 0.32 0.009 0.010 0.013 d 6.30 6.50 6.70 0.248 0.256 0.264 e 2.30 0.090 e1 4.60 0.181 e 3.30 3.50 3.70 0.130 0.138 0.146 h 6.70 7.00 7.30 0.264 0.276 0.287 v10 o 10 o a1 0.02 p008b sot-223 mechanical data STZT2222 / STZT2222a 4/5
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